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dc.contributor.authorBedoya-Hincapié, C.M.spa
dc.contributor.authorRestrepo-Parra, E.spa
dc.contributor.authorOlaya-Flórez, J.J.spa
dc.contributor.authorAlfonso, J.E.spa
dc.contributor.authorFlores-Ruiz, F.J.spa
dc.contributor.authorEspinoza-Beltrán, F.J.spa
dc.date.accessioned2020-01-21T12:21:43Zspa
dc.date.available2020-01-21T12:21:43Zspa
dc.date.issued2014-09spa
dc.identifier.urihttp://hdl.handle.net/11634/20882
dc.description.abstractBismuth titanate (BixTiyOz) thin films were grown using the r.f. magnetron sputtering technique on (100) silicon substrates. In the process, annealing was performed in both oxygen and dry air atmospheres at 600 1C for 30 and 120 min. The structure of the thin films was characterized through X-ray diffraction (XRD), and the ferroelectric response was determined with measurements of piezoelectric force microscopy (PFM). Bi4Ti3O12 with a predominant orthorhombic phase was obtained in the annealed thin films. All the annealed films exhibited the characteristic hysteresis and butterfly loops of ferroelectric materials. Thermal annealing of BixTiyOz films in an atmosphere of air for 30 min resulted in the highest d33 value of 78714 pm/V, which decreased to 64726 pm/V for 120 min. On the other hand, annealing in an oxygen atmosphere produced BixTiyOz films with more uniform d33 values, 5473 pm/V and 4276 pm/V for 30 and 120 min, respectively. Ferroelectric coefficient values decreased with the increase of annealing time in an oxidant atmosphere, which can be explained by the vacancies present. These results are consistent with the experimental measurements carried out in other investigations.spa
dc.format.mimetypeapplication/pdfspa
dc.rightsAtribución-NoComercial-CompartirIgual 2.5 Colombia*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/2.5/co/*
dc.titleFerroelectric behavior of bismuth titanate thin films grown via magnetron sputteringspa
dc.subject.keywordFerroelectricityspa
dc.subject.keywordThin filmsspa
dc.subject.keywordBismuth titanatespa
dc.subject.keywordPFMspa
dc.subject.keywordPiezoelectric coefficientspa
dc.coverage.campusCRAI-USTA Bogotáspa
dc.identifier.doihttps://doi.org/10.1016/j.ceramint.2014.04.017spa
dc.description.domainhttp://unidadinvestigacion.usta.edu.cospa
dc.relation.referencesQ. Chen, Z. Xu, C. Ruiqing, J. Hao, Y. Zhang, G. Li, Q. Yin, Ferroelectric and dielectric properties of Sr2 x(Na, K)xBi4Ti5O18 leadfree piezoelectric ceramics, Physica B 405 (2010) 2781–2784.spa
dc.relation.referencesO. Subohi, G.S. Kumar, M.M. Malik, R. Kurchania, Dielectric properties of bismuth titanate (Bi4Ti3O12) synthesized using solution combustion route, Physica B 407 (2012) 3813–3817.spa
dc.relation.references] M. Chen, Z.L. Liu, Y. Wang, C.C. Wang, X.S. Yang, K.L. Yao, Ferroelectric properties and microstructures of Sm-doped Bi4Ti3O12 ceramics, Physica B 352 (2004) 61–65.spa
dc.relation.referencesB. Aurivillius, Mixed bismuth oxides with layer lattices; II. Structure of Bi4Ti3O12, Arkiv. Kemi. 1 (1949) 499–512.spa
dc.relation.referencesH. Ishiwara, M. Okuyama, Y. Armoto (Eds.), Ferroelectric Random Access Memories-Fundamental and Applications, Springer-Verlag, Berlin, Heidelberg, New York, 2004.spa
dc.relation.referencesR.E. Newnham, R.W. Wolfe, F. Dorrian, Structural basis of ferroelectricity in the bismuth titanate family, Mater. Res. Bull. 6 (1971) 1029–1040.spa
dc.relation.referencesY.-I. Kim, M.K. Jeon, Combined structural refinement of Bi4Ti3O12 using X-ray and neutron powder diffraction data, Mater. Lett. 58 (2004) 1889–1893.spa
dc.relation.referencesK.R. Chakraborty, S.N. Achary, S.J. Patwe, P.S.R. Krishna, A.B. Shinde, A.K. Tyagi, Low temperature neutron diffraction studies on Bi4Ti3O12, Ceram. Int. 33 (2007) 601–604.spa
dc.relation.referencesL.X. He, D. Vanderbilt, First-principles study of oxygen-vacancy pinning of domain walls in PbTiO3, Phys. Rev. B 68 (2003) 134103–134107.spa
dc.relation.referencesM. Dawber, J.F. Scott, A model for fatigue in ferroelectric perovskite thin films, Appl. Phys. Lett. 76 (2000) 1060–1062.spa
dc.relation.referencesD. Dimos, H.N. Al-Shareef, W.L. Warren, B.A. Tuttle, Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O3 thin films, J. Appl. Phys. 80 (1996) 1682–1687.spa
dc.relation.referencesS.B. Desu, Minimization of fatigue in ferroelectric films, Phys. Status Solidi A 151 (1995) 467–480.spa
dc.relation.referencesW. Wu, Y. Wang, G.K.H. Pang, K.H. Wong, C.L. Choy, Effect of latticemisfit strain on the process-induced imprint behavior in epitaxial Pb (Zr0.52Ti0.48)O3 thin films, Appl. Phys. Lett. 85 (2004) 1583–1585.spa
dc.relation.referencesT. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E.H. Poindexter, D. J. Keeble, Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset, Appl. Phys. Lett. 77 (2000) 127–129.spa
dc.relation.referencesJ. Lee, R. Ramesh, V.G. Keramidas, W.L. Warren, G.E. Pike, J.T. Evans Jr., Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin‐film capacitors with La–Sr–Co–O electrodes, Appl. Phys. Lett. 66 (1995) 1337–1339.spa
dc.relation.referencesJ. Lee, R. Ramesh, Imprint of (Pb,La)(Zr,Ti)O3 thin films with various crystalline qualities, Appl. Phys. Lett. 68 (1996) 484–486.spa
dc.relation.referencesA.Z. Simões, C.S. Riccardi, A.H.M. Gonzalez, A. Ries, E. Longo, J.A. Varela, Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres, Mater. Res. Bull. 42 (2007) 967–974.spa
dc.relation.referencesJ.E. Alfonso, J. Torres, J.F. Marco, Influence of the substrate bias voltage on the crystallographic structure and surface composition of Ti6A14V thin films deposited by rf magnetron sputtering, Braz. J. Phys. 36 (2006) 994–996.spa
dc.relation.referencesM. Yamaguchi, T. Nagamoto, O. Omoto, Preparation of highly c-axisoriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties, Thin Solid Films 300 (1997) 299–304.spa
dc.relation.referencesM.I. Morozov, L.P. Mezentseva, V.V. Gusarov, Mechanism of formation of Bi4Ti3O12, Russ. J. Gen. Chem. 72 (2002) 1038–1040.spa
dc.type.categoryGeneración de Nuevo Conocimiento: Artículos publicados en revistas especializadas - Electrónicosspa


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