Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study
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2015-10-09
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Abstract
The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation
of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric
field applied in the z direction, the nearest dipole–dipole interaction in the transversal (x–y) direction, and the nearest
dipole–dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take
into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low
temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects
are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and
stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned
dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.
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